KAIST developing cost-effective, power-efficient memory device combining DRAM/NAND

Summary: Researchers at KAIST are developing a new memory device combining DRAM and NAND flash features. Led by Professor Shinhyun Choi, the breakthrough promises cheaper, power-efficient solutions, potentially replacing current memory options. The device uses phase change memory with ultra-low power consumption, capable of replacing both DRAM and NAND flash. It consumes 15 times less power than previous models, offering a cost-effective and energy-efficient solution for future electronic engineering.

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