Toshiba develops two gate driver technologies to boost SiC power semiconductor efficiency

news.mynavi.jp (Japanese)

Toshiba developed two gate driver technologies to enhance SiC power semiconductor efficiency. These innovations aim to maximize SiC performance by reducing switching losses and noise, addressing trade-offs in current technologies. The findings were presented at ISSCC 2026. One technology uses feedback for precise control, while the other reduces driver loss through a novel switched capacitor circuit, benefiting applications like EV inverters.


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Toshiba develops two gate driver technologies to boost SiC power semiconductor efficiency | News Minimalist