Peking University develops fastest transistor using bismuth

Researchers at Peking University have developed a new type of transistor using bismuth, claiming it is the fastest and most efficient ever made. This innovation marks a significant shift away from traditional silicon-based technology. The team states that their work was driven by the need to overcome challenges posed by current sanctions. They believe this new approach allows for breakthroughs in semiconductor technology. In tests, the bismuth-based transistor outperformed leading devices from major companies like Intel, TSMC, and Samsung, indicating a potential advancement in chip performance.