Gallium nitride microchips integrate hexagonal boron nitride switches for programmable millimetre-wave circuits

Researchers have integrated hexagonal boron nitride (hBN) switches onto gallium nitride (GaN) microchips, creating programmable millimetre-wave circuits for advanced telecommunications. These new circuits, fabricated using memristive radio-frequency switches, operate at frequencies up to 100 GHz with low signal loss and high isolation, demonstrating improved endurance and stability at high temperatures. The technology enables the creation of reconfigurable components like attenuators and power dividers, paving the way for next-generation 6G hardware.