Chinese bismuth transistors may surpass Intel, TSMC

Researchers at Peking University have developed a new transistor using bismuth instead of silicon, claiming it offers 40% more speed and 10% lower power consumption compared to current chips from Intel and TSMC. This new technology features a 30 nm gate length and aims for speeds exceeding 7 GHz. It represents a significant shift in semiconductor materials, as silicon has long been the industry standard. The development coincides with Huawei testing a new lithography machine that could enhance chip production capabilities. This progress suggests a growing momentum in China's chip technology sector.